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Vertical high mobility wrap-gated InAs nanowire transistor

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Author

Summary, in English

We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm<sup>2</sup>/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V<sub>g</sub> = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude

Publishing year

2005

Language

English

Publication/Series

63rd Device Research Conference Digest, 2005. DRC '05

Volume

1

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • wrap gated field effect transistor
  • transconductance
  • current saturation
  • sub threshold characteristics
  • InAs
  • -0.15 V
  • high mobility
  • nanowire transistor

Conference name

Device Research Conference, 2005

Conference date

2005-06-20 - 2005-06-22

Conference place

Santa Barbara, CA, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 0-7803-9040-7