Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications
Author
Summary, in English
We demonstrate metal organic vapour phase epitaxy growth of GaP/GaAs1-xPx/GaP double heterostructure nanowires on GaP(111)B, and report bright photoluminescence at room temperature. By using different PH3 to AsH3 flow ratios during growth of the GaAs1-xPx segment, we are able to control the composition of the segment, making it feasible to tune the wavelength of the emitted light. A photoluminescence system was employed to characterize the luminescence, and x-ray energy dispersive spectrometry and x-ray diffraction studies were used to investigate the composition of the segment. These double heterostructure nanowires could in the future be used in optoelectronic devices and as multi pie-wavelength fluorescent markers for biomedical applications.
Publishing year
2005
Language
English
Pages
936-939
Publication/Series
Nanotechnology
Volume
16
Issue
6
Document type
Journal article
Publisher
IOP Publishing
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 0957-4484