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Characterization of GaSb nanowires grown by MOVPE

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Author

Summary, in English

We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.

Publishing year

2008

Language

English

Pages

5119-5122

Publication/Series

Journal of Chrystal Growth

Volume

310

Issue

23

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • Gallium
  • Metalorganic vapor phase epitaxy
  • compounds
  • Antimonides
  • Nanowires

Conference name

14th International Conference on Metal Organic Vapor Phase Epitaxy

Conference date

2008-06-01 - 2008-06-06

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0022-0248