Novel nanoelectronic triodes and logic devices with TBJs
Author
Summary, in English
In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
Department/s
Publishing year
2004
Language
English
Pages
164-166
Publication/Series
IEEE Electron Device Letters
Volume
25
Issue
4
Document type
Journal article
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Condensed Matter Physics
Keywords
- ballistic devices
- logic gates
- nanoelectronics
- ballistic junctions (TBJs)
- three-terminal
- diodes
- triodes
Status
Published
ISBN/ISSN/Other
- ISSN: 0741-3106