Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues

Summary, in English

We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO₂ surfaces after electron beam exposure and resist development. The attenuation of the SiO₂ valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found that correctly exposed and developed PMMA resist leaves residues with an average thickness of about 0.7 nm. Higher exposure doses result in decrease of the film thickness, but still with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices

• Author: Alexei Zakharov; Ivan Maximov; T. Holmqvist; Lars Montelius; Ingolf Lindau
• Department/s: MAX IV Laboratory; Solid State Physics
• Publishing year: 2002
• Language: English
• Publication/Series: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
• Document type: Conference paper
• Publisher: Lund University
• Topic: Natural Sciences; Condensed Matter Physics; Physical Sciences
• Keywords: Si2p photoelectrons; film thickness; SiO₂ valence band; electron beam exposure; SiO₂ surfaces; surface sensitivity; photoelectron spectromicroscopy; PMMA resist residues; attenuation; electronic devices technology; 0.7 nm; 0.5 nm; SiO₂-Si; SiO₂
• Conference name: Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
• Conference date: 2002-06-24 - 2002-06-28
• Conference place: Malmö, Sweden
• Status: Published