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Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires

Author

Summary, in English

The capacitance of arrays of vertical wrapped-gate InAs nanowires is analysed. With the help of a Poisson–Schrödinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance–voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material.

Publishing year

2008

Language

English

Publication/Series

Nanotechnology

Volume

19

Issue

43

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

Research group

  • Nano
  • Nanometer structure consortium (nmC)
  • Linne Center for Nanoscience and Quantum Engineering

ISBN/ISSN/Other

  • ISSN: 0957-4484