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Heterointerfaces in III-V semiconductor nanowhiskers

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Author

Summary, in English

We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).

Publishing year

2002

Language

English

Pages

281-283

Publication/Series

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics

Keywords

  • Semiconductor nanowhiskers

Conference name

14th Indium Phosphide and Related Materials Conference

Conference date

2002-05-12 - 2002-05-16

Conference place

Stockholm, Sweden

Status

Published

ISBN/ISSN/Other

  • ISSN: 1092-8669
  • CODEN: CPRMEG