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15 nm diameter InAs nanowire MOSFETs

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Author

Summary, in English

InAs is an attractive channel material for III–V nanowire MOSFETs and early prototype high performance nanowire transistors have been demonstrated1. As the gate length is reduced, the nanowire diameter must be scaled quite aggressively in order to suppress short-channel effects2. However, a reduction in transconductance (gm) and drive current (ION) could be expected due to increased surface scattering for thin wires. We present data for the device properties of thin InAs nanowires, with diameters in the 15 nm range, and investigate possible improvements of the performance focusing on transistor applications. In order to boost ION, the source and drain resistance need to be reduced. Several doping sources were therefore evaluated in the study, among them selenium (Se), tin (Sn) and sulphur (S) to form n-i-n structures. We report very high current densities, up to 33 MA/cm2, comparable to modern HEMTs3, and a normalized transconductance of 1.8 S/mm for a nanowire with an intrinsic segment of nominally 150 nm and a diameter of 15 nm.

Publishing year

2011

Language

English

Pages

21-22

Publication/Series

[Host publication title missing]

Document type

Conference paper

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Conference name

Device Research Conference (DRC), 2011 69th Annual

Conference date

2011-06-20

Conference place

Santa Barbara, CA, United States

Status

Published

Research group

  • Nano
  • Digital ASIC

ISBN/ISSN/Other

  • ISSN: 1548-3770