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Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures

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Author

  • T. Wosinski
  • T. Figielski
  • A. Morawski
  • A. Makosa
  • R. Szymczak
  • J. Wrobel
  • Janusz Sadowski

Summary, in English

Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.

Department/s

Publishing year

2008

Language

English

Pages

1097-1104

Publication/Series

Materials Sceince - Poland

Volume

26

Issue

4

Document type

Conference paper

Publisher

Oficyny Wydawniczej Politechniki Wrocławskiej

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • nanostructure
  • ferromagnetic semiconductor
  • magnetoresistance
  • domain wall

Conference name

4th MAG-EL-MAT Members Meeting 2006

Conference date

2006-05-03 - 2006-05-06

Status

Published

ISBN/ISSN/Other

  • ISSN: 2083-134X
  • ISSN: 0137-1339