TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates
Author
Summary, in English
P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.
Department/s
Publishing year
2009
Language
English
Pages
115-118
Publication/Series
Journal of Microscopy
Volume
236
Issue
2
Links
Document type
Journal article
Publisher
John Wiley & Sons Inc.
Topic
- Physical Sciences
- Natural Sciences
Keywords
- TEM
- nanowires
- GaMnAs
- MBE
Status
Published
ISBN/ISSN/Other
- ISSN: 0022-2720