The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

TEM determination of directions of (Ga,Mn)As nanowires grown by MBE on GaAs(001) substrates

Author

  • P. Dluzewski
  • Janusz Sadowski
  • S. Kret
  • J. Dabrowski
  • K. Sobczak

Summary, in English

P>The structure of GaMnAs nanowires (NW) with nominal Mn concentration of up to 7 at% was investigated by transmission electron microscopy. The (Ga,Mn)As NW were grown on epiready GaAs(001) n-type wafers by molecular beam epitaxy. The crystal structure of the NW was determined to be zinc-blende. NW with Mn concentrations lower than 5 at% grow along the << 111 >> direction. NW with higher Mn concentrations grow along the << 110 >> direction and reveal a branching structure. The main nanowire and branches grow along the << 110 >> directions belonging to only one {111} plane.

Department/s

Publishing year

2009

Language

English

Pages

115-118

Publication/Series

Journal of Microscopy

Volume

236

Issue

2

Document type

Journal article

Publisher

John Wiley & Sons Inc.

Topic

  • Physical Sciences
  • Natural Sciences

Keywords

  • TEM
  • nanowires
  • GaMnAs
  • MBE

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-2720