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Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions

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Author

Summary, in English

The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.

Publishing year

2003

Language

English

Pages

2369-2371

Publication/Series

Applied Physics Letters

Volume

83

Issue

12

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951