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GaAs-based Nanowires Studied by Low-Temperature Cathodoluminescence

Author

Summary, in English

We present cathodoluminescence data of nanowires (NWs) grown using size-selected gold particles as seeds. The NWs have a GaAs core with a diameter of 50 nm and a length of several mu m. The NWs in this study were generally covered with a shell of AlGaAs. With increasing growth temperature, the emission intensity increases significantly. From a variety of growth conditions, we conclude that the exposed sides of the NWs during growth play an important role in the emission intensity. The diffusion of carriers was studied by inserting a segment of GaInAs in GaAs NWs. By capping the NWs with an AlGaAs shell, we observe a tenfold increase in the diffusion length along the core.

Publishing year

2011

Language

English

Pages

012042-012042

Publication/Series

Journal of Physics: Conference Series

Volume

326

Document type

Conference paper

Publisher

American Institute of Physics (AIP)

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Conference name

17th International Conference on Microscopy of Semiconducting Materials

Conference date

2011-04-04 - 2011-04-07

Status

Published

Research group

  • Nanometer structure consortium (nmC)

ISBN/ISSN/Other

  • ISSN: 1742-6596
  • ISSN: 1742-6588