Few-electron quantum dots in nanowires

Summary, in English

We demonstrate transport spectroscopy on bottom-up grown few-electron quantum dots in semiconductor nanowires. The dots are defined by InP double barrier heterostructures in InAs nanowires catalytically grown from nanoparticles. By changing the dot size, we can design devices ranging from single-electron transistors to few-electron quantum dots. In the latter case, electrons can be added one by one to the dots from 0 to similar to50 electrons while maintaining an almost constant charging energy, with addition spectra of the devices displaying shell structures as a result of spin and orbital degeneracies. The reduced dimensionality of the nanowire emitter gives rise to pronounced resonant tunneling peaks, where a gate can be used to control the peak positions.

• Author: Mikael Björk; Claes Thelander; Adam Hansen; Linus E Jensen; Magnus Larsson; Reine Wallenberg; Lars Samuelson
• Department/s: Solid State Physics; Centre for Analysis and Synthesis
• Publishing year: 2004
• Language: English
• Pages: 1621-1625
• Publication/Series: Nano Letters
• Volume: 4
• Issue: 9
• Links: http://dx.doi.org/10.1021/nl049230s
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992