Spatial Structures Formed during High-Temperature Vacuum Annealing of Diamond-Like Film Deposited on a Silicon Substrate

Summary, in English

The process of an ultrahigh vacuum annealing of a diamond-like carbon film deposited on a silicon substrate has been studied in situ using a photoemission microscope mounted at the MAX-lab synchrotron's radiation source. After the annealing the film was examined ex situ using an atomic force microscope. It is revealed that the graphitization of the film occurs and round formations of several microns in size with a core of similar to 0.2 mu m in size appear on its surface at the temperature exceeding 1000 degrees C. Photoemission images of these formations have shown the presence of silicon on their surface. Apparently, the interaction between the carbon film and silicon substrate begins in the middle of the formation and spreads to the adjacent region at the following stage.

• Author: M. B. Tsetlin; Alexei Zakharov; K. I. Maslakov; M. N. Mikheeva; I. Lindau
• Department/s: MAX IV Laboratory
• Publishing year: 2009
• Language: English
• Pages: 752-755
• Publication/Series: Journal Of Surface Investigation-X-Ray Synchrotron And Neutron Techniques
• Volume: 3
• Issue: 5
• Links: http://dx.doi.org/10.1134/S1027451009050152
• Document type: Journal article
• Publisher: MAIK Nauka/Interperiodica
• Topic: Natural Sciences; Physical Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 1027-4510