20 GHz gated tunnel diode based UWB pulse generator
Author
Summary, in English
We demonstrate a pulse generator based on a GaAs-AlGaAs gated resonant tunneling diode (RTD). This is realized by integrating a third terminal, the gate, into the current path of a RTD. The gate consists of a 200 A thick tungsten grating buried 300 A above the RTD. This implementation allows for control of the current through the RTD. By integrating this device in parallel with an on-chip inductance, a negative differential resistance (NDR) oscillator is formed. It is demonstrated that by using the gate to change the output conductance of the device, the oscillations may be switched on and off, creating short bursts of RF power. This technique allows for rapid quenching of the oscillator, and hence the ability to generate short pulses at high frequency, enabling impulse radio ultra-wideband communication implementations. The highest demonstrated oscillation frequency is 22 GHz with an output power of -4.1 dBm, and the shortest pulses generated are 1.3 ns. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Publishing year
2009
Language
English
Pages
1399-1402
Publication/Series
Physica Status Solidi C: Current Topics In Solid State Physics, Vol 6, No 6
Volume
6
Issue
6
Document type
Conference paper
Publisher
John Wiley & Sons Inc.
Topic
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Conference name
35th International Symposium on Compound Semiconductors
Conference date
2008-09-21 - 2008-09-24
Conference place
Rust, Germany
Status
Published
Research group
- Nano
ISBN/ISSN/Other
- ISSN: 1610-1634