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Nanowire resonant tunneling diodes

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Author

Summary, in English

Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.

Publishing year

2002

Language

English

Pages

4458-4460

Publication/Series

Applied Physics Letters

Volume

81

Issue

23

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Chemical Sciences
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951