Defect Free PbTe Nanowires Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates
Author
Summary, in English
The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the substrate, have tapered shapes, and have diameters of about 90 rim at the base and 60 run at the top. High resolution transmission electron microscopy pictures reveal that the PbTe nanowires have a rock-salt structure and, in contrast to the one-dimensional structures of III-V and II-VI compound semiconductors such as GaAs. InAs, or ZnTe, are free from stacking faults. A theoretical analysis of these experimental findings, which is based oil ab initio modeling of the PbTe nanowires, is also presented.
Department/s
Publishing year
2010
Language
English
Pages
109-113
Publication/Series
Crystal Growth & Design
Volume
10
Issue
1
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Physical Sciences
- Natural Sciences
Status
Published
ISBN/ISSN/Other
- ISSN: 1528-7483