ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

Summary, in English

ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 mu m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 angstrom thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 degrees to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is < 111 >.

• Author: E. Janik; Janusz Sadowski; P. Dluzewski; S. Kret; L. T. Baczewski; A. Petroutchik; E. Lusakowska; J. Wrobel; W. Zaleszczyk; G. Karczewski; T. Wojtowicz; A. Presz
• Department/s: MAX IV Laboratory
• Publishing year: 2006
• Language: English
• Publication/Series: Applied Physics Letters
• Volume: 89
• Issue: 13
• Links: http://dx.doi.org/10.1063/1.2357334
• Document type: Journal article
• Publisher: American Institute of Physics (AIP)
• Topic: Physical Sciences; Natural Sciences
• Status: Published
• ISBN/ISSN/Other: ISSN: 0003-6951