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GaAs/GaSb nanowire heterostructures grown by MOVPE

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Author

Summary, in English

We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated AuGa or AuGa2 during GaSb growth. The high Ga content in the particle gives a characteristic diameter increase between the GaAs and GaSb segment. From TEM and XEDS measurements we conclude that the GaSb nanowire growth occurs along either the AuGa-GaSb or AuGa2-GaSb pseudo-binaries of the Au-Ga-Sb ternary phase diagram. Finally, the GaSb nanowires exhibit untapered radial growth on the {1 (1) over bar 0} side facets. (C) 2008 Elsevier B.V. All rights reserved.

Publishing year

2008

Language

English

Pages

4115-4121

Publication/Series

Journal of Crystal Growth

Volume

310

Issue

18

Document type

Journal article

Publisher

Elsevier

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • gallium antimonide
  • antimonides
  • metal-organic vapor phase epitaxy
  • nanowires
  • heterostructures

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0022-0248