High-Performance Single Nanowire Tunnel Diodes.

Summary, in English

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

• Author: Jesper Wallentin; Johan M. Persson; Jakob B. Wagner; Lars Samuelson; Knut Deppert; Magnus Borgström
• Department/s: Solid State Physics; NanoLund: Centre for Nanoscience
• Publishing year: 2010
• Language: English
• Pages: 974-979
• Publication/Series: Nano Letters
• Volume: 10
• Issue: Online February 17, 2010
• Links: http://dx.doi.org/10.1021/nl903941b
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• Research group: Nanometer structure consortium (nmC)
• ISBN/ISSN/Other: ISSN: 1530-6992