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InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy

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Author

Summary, in English

We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.

Publishing year

2008

Language

English

Pages

042017-042017

Publication/Series

Journal of Physics: Conference Series

Volume

100

Document type

Conference paper

Publisher

IOP Publishing

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Conference name

17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology

Conference date

2007-07-02 - 2007-07-06

Conference place

Stockholm, Sweden

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 1742-6588
  • ISSN: 1742-6596