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Role of surface diffusion in chemical beam epitaxy of InAs nanowires

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Author

  • Linus Jensen
  • Mikael Björk
  • Sören Jeppesen
  • Ann Persson
  • Jonas Ohlsson
  • Lars Samuelson

Summary, in English

We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 mum. We also observe a decreasing length growth rate with increasing wire diameter.

Publishing year

2004

Language

English

Pages

1961-1964

Publication/Series

Nano Letters

Volume

4

Issue

10

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992