The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Silicon intercalation into the graphene-SiC interface

På svenska

Author

  • F. Wang
  • K. Shepperd
  • J. Hicks
  • M. S. Nevius
  • H. Tinkey
  • A. Tejeda
  • A. Taleb-Ibrahimi
  • F. Bertran
  • P. Le Fevre
  • D. B. Torrance
  • P. N. First
  • W. A. de Heer
  • Alexei Zakharov
  • E. H. Conrad
Show all

Summary, in English

In this work we use low-energy electron microscopy, x-ray photoemission electron microscopy, and x-ray photoelectron spectroscopy to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000 (1) over bar) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020 degrees C. In a sequence of depositions, we have been able to intercalate similar to 6 ML of Si into the graphene-SiC interface.

Department/s

Publishing year

2012

Language

English

Publication/Series

Physical Review B (Condensed Matter and Materials Physics)

Volume

85

Issue

16

Document type

Journal article

Publisher

American Physical Society

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1098-0121