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Fabrication and characterization of AlP-GaP core-shell nanowires

Author

Summary, in English

We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.

Publishing year

2011

Language

English

Pages

290-295

Publication/Series

Journal of Crystal Growth

Volume

324

Issue

1

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • Nanostructures
  • Crystal structure
  • Low press
  • Metalorganic vapor phase
  • epitaxy
  • Nanomaterials
  • Semiconducting aluminum compounds
  • Semiconducting III-V materials

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248