Fabrication and characterization of AlP-GaP core-shell nanowires
Author
Summary, in English
We report on the particle assisted synthesis of core-shell AlP-GaP nanowires by use of metal-organic vapor phase epitaxy. The core-shell approach is chosen such as to stabilize the AlP which is highly sensitive to water. The nanowires were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. These nanowires have an indirect band-gap and form a type II staggered heterojunction. By designed capping of the AlP cores by GaP, we find the nanowires to be stable for more than a year. (C) 2011 Elsevier B.V. All rights reserved.
Publishing year
2011
Language
English
Pages
290-295
Publication/Series
Journal of Crystal Growth
Volume
324
Issue
1
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
Keywords
- Nanostructures
- Crystal structure
- Low press
- Metalorganic vapor phase
- epitaxy
- Nanomaterials
- Semiconducting aluminum compounds
- Semiconducting III-V materials
Status
Published
ISBN/ISSN/Other
- ISSN: 0022-0248