Low-frequency noise in vertical InAs nanowire FETs
Author
Summary, in English
This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
Department/s
Publishing year
2010
Language
English
Pages
428-430
Publication/Series
IEEE Electron Device Letters
Volume
31
Issue
5
Full text
- Available as PDF - 189 kB
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Links
Document type
Journal article
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Keywords
- nanowire (NW)
- InAs
- FET
- flicker noise
Status
Published
Research group
- Nano
- Digital ASIC
- Analog RF
ISBN/ISSN/Other
- ISSN: 0741-3106