The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Low-frequency noise in vertical InAs nanowire FETs

Author

Summary, in English

This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).

Publishing year

2010

Language

English

Pages

428-430

Publication/Series

IEEE Electron Device Letters

Volume

31

Issue

5

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • nanowire (NW)
  • InAs
  • FET
  • flicker noise

Status

Published

Research group

  • Nano
  • Digital ASIC
  • Analog RF

ISBN/ISSN/Other

  • ISSN: 0741-3106