Improved breakdown voltages for type I InP/InGaAs DHBTs
Author
Summary, in English
Publishing year
2008
Language
English
Pages
504-507
Publication/Series
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
Document type
Conference paper
Publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
Topic
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Keywords
- InP heterojunction bipolar transistor
Conference name
20th International Conference on Indium Phosphide and Related Materials
Conference date
2008-05-25 - 2008-05-29
Conference place
Versailles, France
Status
Published
Research group
- Nano
ISBN/ISSN/Other
- ISSN: 1092-8669