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Carrier density saturation in a Ga0.25In0.75As/InP heterostructure

Author

Summary, in English

We observe a strong saturation of the carrier density in the quantum well of a Ga0.25In0.75As/InP MISFET at positive gate voltages. Using a self-consistent Schrodinger/Poisson solver, we model the band structure and find that the saturation is caused by the population of charge states between the gate and the quantum well. We discuss the impact of these charge states on the transport properties, and present a fabrication method that avoids parallel conduction in this heterostructure. (C) 2007 Elsevier B.V. All rights reserved.

Publishing year

2008

Language

English

Pages

1754-1756

Publication/Series

Physica E: Low-Dimensional Systems and Nanostructures

Volume

40

Issue

5

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • saturation
  • carrier density
  • GaInAs
  • InP
  • band structure

Status

Published

ISBN/ISSN/Other

  • ISSN: 1386-9477