Carrier density saturation in a Ga0.25In0.75As/InP heterostructure
Author
Summary, in English
We observe a strong saturation of the carrier density in the quantum well of a Ga0.25In0.75As/InP MISFET at positive gate voltages. Using a self-consistent Schrodinger/Poisson solver, we model the band structure and find that the saturation is caused by the population of charge states between the gate and the quantum well. We discuss the impact of these charge states on the transport properties, and present a fabrication method that avoids parallel conduction in this heterostructure. (C) 2007 Elsevier B.V. All rights reserved.
Department/s
Publishing year
2008
Language
English
Pages
1754-1756
Publication/Series
Physica E: Low-Dimensional Systems and Nanostructures
Volume
40
Issue
5
Document type
Journal article
Publisher
Elsevier
Topic
- Condensed Matter Physics
Keywords
- saturation
- carrier density
- GaInAs
- InP
- band structure
Status
Published
ISBN/ISSN/Other
- ISSN: 1386-9477