Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.
Author
Summary, in English
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the subthreshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 and 4 K, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing.
Publishing year
2012
Language
English
Pages
1-6
Publication/Series
Nano Letters
Volume
12
Issue
1
Document type
Journal article
Publisher
The American Chemical Society (ACS)
Topic
- Nano Technology
Status
Published
ISBN/ISSN/Other
- ISSN: 1530-6992