A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

Summary, in English

This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor

• Author: Pietro Andreani; Sven Mattisson
• Department/s: Department of Electrical and Information Technology
• Publishing year: 2000
• Language: English
• Pages: 315-318
• Publication/Series: The 2000 IEEE International Symposium on Circuits and Systems, 2000. Proceedings. ISCAS 2000.
• Volume: 1
• Links: http://ieeexplore.ieee.org/iel5/6910/18601/00857093.pdf?tp=&isnumber=18601&arnumber=857093&punumber=6910; http://dx.doi.org/10.1109/ISCAS.2000.857093
• Document type: Conference paper
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Status: Published
• ISBN/ISSN/Other: ISBN: 0-7803-5482-6