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Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

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Author

Summary, in English

InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]

Publishing year

2009

Language

English

Pages

2222-2226

Publication/Series

Journal of Vacuum Science and Technology B

Volume

27

Issue

5

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Materials Engineering

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 1520-8567