Growth Mechanism of Self-Catalyzed Group III-V Nanowires.

Summary, in English

Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.

• Author: Bernhard Mandl; Julian Stangl; Emelie Hilner; Alexei Zakharov; Karla Hillerich; Anil Dey; Lars Samuelson; Günther Bauer; Knut Deppert; Anders Mikkelsen
• Department/s: Solid State Physics; Synchrotron Radiation Research; MAX IV Laboratory; Department of Electrical and Information Technology; NanoLund: Centre for Nanoscience
• Publishing year: 2010
• Language: English
• Pages: 4443-4449
• Publication/Series: Nano Letters
• Volume: 10
• Issue: Online October 7, 2010
• Links: http://dx.doi.org/10.1021/nl1022699
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• Research group: Nanometer structure consortium (nmC); Digital ASIC; Nano
• ISBN/ISSN/Other: ISSN: 1530-6992