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InAs nanowires grown by MOVPE

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Author

Summary, in English

Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature. Finally, we report growth of InAs nanowires on both InAs and InP substrates, with those grown on InAs substrates exhibiting more tapered shape. (c) 2006 Elsevier B.V. All rights reserved.

Publishing year

2007

Language

English

Pages

631-634

Publication/Series

Journal of Crystal Growth

Volume

298

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • semiconducting III-V
  • nanostructures
  • metalorganic vapour phase epitaxy
  • material

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248