Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs

Summary, in English

We present processing technology and characterization results for InP/GaInAs two-dimensional electron gas (2DEG) three-terminal ballistic junction (TBJ) devices manufactured using nanoimprint lithography (NIL). To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made using electron beam lithography and reactive ion etching. After NIL, the resist residues are removed in oxygen plasma; this is followed by wet etching of InP/GaInAs to define the TBJ structures. Fabricated TBJ devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics as predicted by the theory (Xu H Q 2001 APPI. Phys. Lett. 78 2064) are demonstrated.

• Author: Ivan Maximov; Patrick Carlberg; Daniel Wallin; Ivan Shorubalko; Werner Seifert; Hongqi Xu; Lars Montelius; Lars Samuelson
• Department/s: Solid State Physics
• Publishing year: 2002
• Language: English
• Pages: 666-668
• Publication/Series: Nanotechnology
• Volume: 13
• Issue: 5
• Links: http://dx.doi.org/10.1088/0957-4484/13/5/325
• Document type: Journal article
• Publisher: IOP Publishing
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 0957-4484