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Nitrogen-Doped Graphene: Efficient Growth, Structure, and Electronic Properties

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Author

  • D. Usachov
  • O. Vilkov
  • A. Grueneis
  • D. Haberer
  • A. Fedorov
  • V. K. Adamchuk
  • Alexei Preobrajenski
  • P. Dudin
  • A. Barinov
  • M. Oehzelt
  • C. Laubschat
  • D. V. Vyalikh
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Summary, in English

A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.

Department/s

Publishing year

2011

Language

English

Pages

5401-5407

Publication/Series

Nano Letters

Volume

11

Issue

12

Document type

Journal article

Publisher

The American Chemical Society (ACS)

Topic

  • Nano Technology

Keywords

  • Graphene
  • nitrogen doping
  • electronic structure
  • synthesis
  • triazine
  • ARPES

Status

Published

ISBN/ISSN/Other

  • ISSN: 1530-6992