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Thermal diffusion of Mn through GaAs overlayers on (Ga, Mn) As

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Author

  • Johan Adell
  • I. Ulfat
  • L. Ilver
  • Janusz Sadowski
  • K. Karlsson
  • J. Kanski

Summary, in English

Thermally stimulated diffusion of Mn through thin layers of GaAs has been studied by x-ray photoemission. (Ga, Mn) As samples with 5 at% Mn were capped with 4, 6 and 8 monolayer (ML) GaAs, and Mn diffusing through the GaAs was trapped on the surface by means of amorphous As. It was found that the out-diffusion is completely suppressed for an 8 ML thick GaAs film. The short diffusion length is attributed to an electrostatic barrier formed at the (Ga, Mn) As/GaAs interface.

Department/s

Publishing year

2011

Language

English

Publication/Series

Journal of Physics: Condensed Matter

Volume

23

Issue

8

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Physical Sciences
  • Natural Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 1361-648X