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Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

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Author

  • C Patrik T Svensson
  • Thomas Mårtensson
  • Johanna Trägårdh
  • Christina Larsson
  • Michael Rask
  • Dan Hessman
  • Lars Samuelson
  • Jonas Ohlsson

Summary, in English

Vertical light emitting diodes (LEDs) based on GaAs/InGaP core/shell nanowires, epitaxially grown on GaP and Si substrates, have been fabricated. The devices can be fabricated over large areas and can be precisely positioned on the substrates, by the use of standard lithography techniques, enabling applications such as on-chip optical communication. LED functionality was established on both kinds of substrate, and the devices were evaluated in terms of temperature-dependent photoluminescence and electroluminescence.

Publishing year

2008

Language

English

Pages

6-305201

Publication/Series

Nanotechnology

Volume

19

Issue

30

Document type

Journal article

Publisher

IOP Publishing

Topic

  • Nano Technology

Status

Published

ISBN/ISSN/Other

  • ISSN: 0957-4484