Precursor evaluation for in situ InP nanowire doping

Summary, in English

The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.

• Author: Magnus Borgström; E. Norberg; P. Wickert; H. A. Nilsson; Johanna Trägårdh; Kimberly Dick Thelander; G. Statkute; Peter Ramvall; Knut Deppert; Lars Samuelson
• Department/s: Solid State Physics
• Publishing year: 2008
• Language: English
• Publication/Series: Nanotechnology
• Volume: 19
• Issue: 44
• Links: http://dx.doi.org/10.1088/0957-4484/19/44/445602
• Document type: Journal article
• Publisher: IOP Publishing
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 0957-4484