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SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

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Author

Summary, in English

A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.

Publishing year

2004

Language

English

Pages

83-85

Publication/Series

Electronics Letters

Volume

40

Issue

1

Document type

Journal article

Publisher

IEE

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Status

Published

ISBN/ISSN/Other

  • ISSN: 1350-911X