1 volt CMOS Bluetooth front-end

Summary, in English

A fully integrated 1 V CMOS Bluetooth front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5 mW, the noise figure is 5 dB, the conversion gain is 14 dB, the CP₁ is -16 dBm, and the IIP₃ is -5 dBm. The front-end is implemented in a standard 0.25 μm-CMOS technology

• Author: Fred Tillman; Henrik Sjöland
• Department/s: Department of Electrical and Information Technology
• Publishing year: 2002
• Language: English
• Pages: 795-798
• Publication/Series: ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
• Document type: Conference paper
• Publisher: Univ. Bologna
• Topic: Electrical Engineering, Electronic Engineering, Information Engineering
• Keywords: conversion gain; power consumption; topology robustness; measurement correlation; input matching; maximum signal headroom; Bluetooth specification 1.0B; passive mixer; common-gate LNA; CMOS Bluetooth front-end; low IF device; noise figure; Bluetooth receiver; 1 V; 2.5 mW; 5 dB; 14 dB; 0.25 micron
• Conference name: ESSCIRC 2002. Proceedings of the 28th European Solid-State Circuit Conference
• Conference date: 2002-09-24 - 2002-09-26
• Conference place: Firenze, Italy
• Status: Published
• ISBN/ISSN/Other: ISBN: 88-900847-9-0