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Mn diffusion in Ga1-xMnxAs/GaAs superlattices

Author

Summary, in English

Ga1-xMnxAs/GaAs superlattices with Mn concentrations of 1% and 5% in the Ga1-xMnxAs layers and a GaAs spacer thickness of 4 and 60 GaAs monolayers have been studied by cross-sectional scanning tunneling microscopy. By achieving atomic resolution of the superlattices, we observe individual Mn atoms in the Ga1-xMnxAs layers and in the GaAs spacer. We find that about 20% of the total amount of Mn diffuses from the GaMnAs layers into the GaAs spacer layers. Our results can be related to previous measurements of the magnetic properties of short period Ga1-xMnxAs/GaAs superlattices.

Publishing year

2004

Language

English

Pages

4660-4662

Publication/Series

Applied Physics Letters

Volume

85

Issue

20

Document type

Journal article

Publisher

American Institute of Physics (AIP)

Topic

  • Physical Sciences
  • Natural Sciences
  • Atom and Molecular Physics and Optics

Status

Published

ISBN/ISSN/Other

  • ISSN: 0003-6951