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Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures

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Author

Summary, in English

We studied the morphology of GaP/(001)GaAs and GaAs/(001)GaP heterostructures grown by metal-organic vapour-phase epitaxy and found wire-like surface undulations elongated in the [110] direction. We attribute this elongation to anisotropic lateral growth rates in the [110] and [110] directions, which are due to a different roughness of monolayer surface steps. In III-V materials grown by molecular beam epitaxy. such surface corrugations are usually elongated in [110]. We explain this difference by the two growth methods having inverted ratios of lateral growth rates in [110] and [110]. Resonant tunnelling diodes fabricated from the GaP/GaAs heterostructures showed very symmetric I-V characteristics. Their peak-to-valley ratio was limited to 2. most probably due to the corrugation of the GaP barriers. (C) 2002 Elsevier Science B.V. All rights reserved.

Publishing year

2003

Language

English

Pages

375-379

Publication/Series

Journal of Crystal Growth

Volume

248

Document type

Journal article

Publisher

Elsevier

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • resonant tunnelling diodes
  • GaP
  • GaAs
  • metalorganic vapor phase epitaxy
  • morphology
  • strain

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248