The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode

På svenska

Author

Summary, in English

This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.

Publishing year

2011

Language

English

Pages

131-133

Publication/Series

IEEE Electron Device Letters

Volume

32

Issue

2

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • High-kappa HfO2
  • InP/InGaAs
  • memcapacitors
  • memristors
  • nanoelectronics

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0741-3106