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Coupling between lateral modes in a vertical resonant tunneling structure

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Author

Summary, in English

We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector

Publishing year

2002

Language

English

Pages

950-953

Publication/Series

Physica E: Low-Dimensional Systems and Nanostructures

Volume

13

Issue

2-4

Document type

Journal article

Publisher

Elsevier

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • quantum dot structure
  • 4.2 K
  • vertical resonant tunneling structure
  • vertical electron transport
  • laterally constricted resonant tunneling transistor
  • lateral modes coupling
  • scattering-matrix approach
  • Landauer formalism
  • current-voltage measurements

Status

Published

ISBN/ISSN/Other

  • ISSN: 1386-9477
  • CODEN: PELNFM