The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

På svenska

Author

Summary, in English

We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.

Publishing year

2011

Language

English

Pages

2733-2738

Publication/Series

IEEE Transactions on Microwave Theory and Techniques

Volume

59

Issue

10

Document type

Journal article

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • High-k
  • InAs
  • MOSFET
  • nanowire
  • RF

Status

Published

Research group

  • Nano

ISBN/ISSN/Other

  • ISSN: 0018-9480