The browser you are using is not supported by this website. All versions of Internet Explorer are no longer supported, either by us or Microsoft (read more here: https://www.microsoft.com/en-us/microsoft-365/windows/end-of-ie-support).

Please use a modern browser to fully experience our website, such as the newest versions of Edge, Chrome, Firefox or Safari etc.

MnAs overlayer on GaN(000(1)under-bar)-(1 x 1) its growth, morphology and electronic structure

På svenska

Author

  • BJ Kowalski
  • IA Kowalik
  • RJ Iwanowski
  • E Lusakowska
  • M Sawicki
  • Janusz Sadowski
  • I Grzegory
  • S Porowski

Summary, in English

MnAs layer has been grown by means of MBE on the GaN(000 (1) under bar)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.

Department/s

Publishing year

2004

Language

English

Pages

645-650

Publication/Series

Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics

Volume

105

Issue

6

Document type

Journal article

Publisher

Institute of Physics, Polish Academy of Sciences

Topic

  • Natural Sciences
  • Physical Sciences

Status

Published

ISBN/ISSN/Other

  • ISSN: 0587-4246