Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques

Summary, in English

Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)(B) substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain in homogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.

• Author: Joel Eymery; Francois Rieutord; Vincent Favre-Nicolin; Odile Robach; Yann-Michel Niquet; Linus Fröberg; Thomas Mårtensson; Lars Samuelson
• Department/s: Solid State Physics
• Publishing year: 2007
• Language: English
• Pages: 2596-2601
• Publication/Series: Nano Letters
• Volume: 7
• Issue: 9
• Links: http://dx.doi.org/10.1021/nl070888q
• Document type: Journal article
• Publisher: The American Chemical Society (ACS)
• Topic: Nano Technology
• Status: Published
• ISBN/ISSN/Other: ISSN: 1530-6992