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Diffusion length measurements in axial and radial heterostructured nanowires using cathodoluminescence

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Author

Summary, in English

We have measured the ambipolar diffusion lengths in nanowires with GaAs and AlGaAs core material using cathodoluminescence imaging. This was done by combining III-V semiconductor materials with different bandgaps in single nanowires. We show that it is possible to record intensity profiles of the emission from segments of lower bandgap material positioned along the nanowire length and in this way gain an insight on important carrier transport properties of the nanowire core material. We present diffusion data for GaAs and AlGaAs nanowire core material in different radially and axially heterostructured nanowires and show that the diffusion of carriers is greatly increased by capping the nanowires with a higher-bandgap material. In addition, we show how a decoupling of the radial and axial growth during particle-seeded growth is necessary in order to reach long diffusion lengths along the core of axially heterostructured nanowires. In addition, for ternary compounds (InGaAs and AlGaAs), we observe compositional differences for radial and axial nanowire growth. (C) 2010 Elsevier B.V. All rights reserved.

Publishing year

2011

Language

English

Pages

138-142

Publication/Series

Journal of Crystal Growth

Volume

315

Issue

1

Document type

Conference paper

Publisher

Elsevier

Topic

  • Condensed Matter Physics

Keywords

  • Characterization
  • Diffusion
  • Nanostructures
  • Metalorganic vapor phase
  • epitaxy
  • Nanomaterials
  • Semiconducting III-IV materials

Conference name

15th international conference on metal organic vapor phase epitaxy, 2010

Conference date

2010-05-23 - 2010-05-28

Conference place

Lake Tahoe, United States

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248