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InAsP/InAs nanowire heterostructure field effect transistors

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Author

Summary, in English

We here show simulation results that by including a small InAsP heterostructure barrier inside the channel of a InAs nanowire transistor it is possible to increase both the sub threshold slope and on-off ratio with only a modest decrease in the drive current for a fixed gate overdrive. The design is based on the fact that the sharp InAsP heterostructure induces a small barrier in the conduction band and locally increases the bandgap, independent of the applied drain voltage

Publishing year

2006

Language

English

Pages

173-174

Publication/Series

Device Research Conference

Document type

Conference paper

Publisher

IEEE - Institute of Electrical and Electronics Engineers Inc.

Topic

  • Condensed Matter Physics
  • Electrical Engineering, Electronic Engineering, Information Engineering

Keywords

  • nanowire heterostructure field effect transistors
  • InAsP-InAs

Conference name

Device Research Conference, 2006

Conference date

2006-06-26 - 2006-06-28

Conference place

University Park, PA, United States

Status

Published

ISBN/ISSN/Other

  • ISBN: 0-7803-9748-7