Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

Summary, in English

Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

• Author: Thomas Mårtensson; Jakob Wagner; Emelie Hilner; Anders Mikkelsen; Claes Thelander; Julian Stangl; Jonas Ohlsson; Anders Gustafsson; Edvin Lundgren; Lars Samuelson; Werner Seifert
• Department/s: Solid State Physics; Centre for Analysis and Synthesis; Synchrotron Radiation Research
• Publishing year: 2007
• Language: English
• Pages: 1801-1801
• Publication/Series: Advanced Materials
• Volume: 19
• Links: http://dx.doi.org/10.1002/adma.200700285
• Document type: Journal article
• Publisher: John Wiley & Sons Inc.
• Topic: Chemical Sciences; Atom and Molecular Physics and Optics; Condensed Matter Physics
• Status: Published
• ISBN/ISSN/Other: ISSN: 1521-4095