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Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

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Author

Summary, in English

In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.

Publishing year

2003

Language

English

Pages

310-316

Publication/Series

Journal of Crystal Growth

Volume

248

Document type

Journal article

Publisher

Elsevier

Topic

  • Electrical Engineering, Electronic Engineering, Information Engineering
  • Condensed Matter Physics

Keywords

  • nanomaterials
  • nanostructures
  • metalorganic vapor phase epitaxy
  • semiconducting IIIV materials

Status

Published

ISBN/ISSN/Other

  • ISSN: 0022-0248